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发明公开
CN103958729A 溅射靶以及高电阻透明膜及其制造方法 无效 - 撤回

溅射靶以及高电阻透明膜及其制造方法
摘要：
本发明提供一种即使DC溅射也能够制作高电阻的透明膜的溅射靶以及高电阻透明膜及其制造方法。本发明的溅射靶以氧化锌为主要成分，由具有相对于总金属成分含量含有0.005～0.1原子％的选自In、Ga、Al、B的元素群中的一种或两种以上的元素的成分组成的氧化物烧结体构成，所述氧化物烧结体的密度为5.3g/cm3以上。高电阻透明膜使用上述溅射靶通过DC溅射成膜，体积电阻率为1×104Ω·cm以上。
摘要（英）：

A purpose of the present invention is to provide a sputtering target which enables the production of a high-resistance transparent film even by DC sputtering; a high-resistance transparent film; and a method for producing the high-resistance transparent film. The sputtering target comprises a sintered oxide compact that contains zinc oxide as the main component and has such a component composition that at least one element selected from the element group consisting of In, Ga, Al and B is contained in an amount of 0.005 to 0.1 at.% relative to the total amount of the metal components, wherein the sintered oxide compact has a density of 5.3 g/cm3 or more. The high-resistance transparent film is produced by the DC sputtering by using the sputtering target and has a volume resistivity of 1104 Ohms.cm or more.

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