The invention provides an annular silicon deep hole and a method for preparing an annular silicon deep hole electrode. The method comprises the steps of providing a silicon substrate, manufacturing a photolithographic mask with an annular window on the surface of the silicon substrate; adopting a deep reactive ion etching process to etch the silicon substrate below the annular window, and forming the annular silicon deep hole; forming an insulating layer and a barrier layer on the surface of the annular silicon deep hole; forming a seed layer on the surface of the insulating layer; electroplating the surface of the seed layer with copper until the annular silicon deep hole is filled; and adopting a mechanochemical polishing method to polish the surface of the silicon substrate. According to the annular silicon deep hole and the method capable of effectively manufacturing a copper electrode in the annular silicon deep hole, layering of copper and the silicon substrate can be effectively avoided, and a silicon deep hole electrode structure stable in performance is obtained. The method is simple in process, can effectively improve product yield and is suitable for industrial production.