A memory cell based on cell capacitance and a method for operating the memory cell are provided. The memory cell and the method include a bidirectional access device and a memory element electrically coupled in series. The bidirectional access device includes a tunneling capacitance. The memory element is programmable to a first and second state by application of a first and second write voltage opposite in polarity to one another. The memory element has a lower capacitance in the first state than the second state. A read unit senses a transient read current due to a voltage drop upon application of a read voltage. Determining if the memory element is the first or second state is based on whether the read current is greater or less than a sense threshold. The sense threshold is based on a capacitance ratio between the first and second state.