The invention discloses an ion optical system of a high-temperature high-energy ion implanter. The ion optical system of the high-temperature high-energy ion implanter comprises an ion source, wherein ions generated by the ion source pass through an extraction system and then form an ion beam, the ion beam passes through a mass analyzer and an analysis diaphragm in sequence, an ion beam obtained after analysis and refinement are conducted through the analysis diaphragm passes through a pair of vertical scanning plate electrodes, the ion beam obtained after analysis and refinement are conducted is scanned to be a fan-shaped beam band through the vertical scanning plate electrodes, parallel band-shaped beams are formed after the fan-shaped beam band passes through a 30-degree parallel beam lens, and the parallel band-shaped beams are injected into a wafer through a high-temperature target disc after being accelerated through an acceleration pipe. By the adoption of the ion optical system of the high-temperature high-energy ion implanter, the species of injected ions and the energy precision can be guaranteed, and the requirement for wafer heating of the injection technology is met.