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发明公开
CN104060229A 一种CoCrPt-氧化物磁记录靶材、薄膜及其制备方法 无效 - 撤回

一种CoCrPt-氧化物磁记录靶材、薄膜及其制备方法
摘要：
本发明公开了一种CoCrPt-氧化物磁记录靶材、薄膜及其制备方法，该CoCrPt-氧化物靶材包括SiO2，TiO2，CrO，Cr2O3，Ta2O3，W2O3，Al2O3，Y2O3等氧化物中的一种或几种，其中氧化物相的平均晶粒尺寸在3～20μm。合金靶材中Co、Cr、Pt形成α-Co及ε-Co两相Co基固溶体，其中以低温相六方ε-Co固溶体为主，靶材的厚度在2～6mm之间，靶材的透磁率(PTF)值40％～60％之间。由该合金靶材制得的磁记录介质的磁记录层呈(002)晶面的择优取向生长，在X衍射分析中，用式(1)表示的(002)晶面的X射线衍射峰强度比：………………………式(1)为70％～90％。本发明的溅射靶，有害杂质元素含量低，晶粒尺寸细小均匀，化学成份均匀且偏离名义成分较小。使用上述溅射靶材制备的磁记录介质，该磁记录介质晶粒细小均匀、非磁性晶界明显，磁学性能优良。
摘要（英）：

The invention discloses a CoCrPt-oxide magnetic recording target, film and a preparation method thereof. The CoCrPt-oxide target includes one or several oxides selected from SiO2, TiO2, CrO, Cr2O3, Ta2O3, W2O3, Al2O3 and Y2O3, wherein the average grain size of the oxides is in the range of 3-20 mum. In the Alloy target, Co, Cr and Pt form an alpha-Co and epsilon Co two-phase Co based solid solution, which mainly comprises low temperature phase hexagonal epsilon-Co solid solution; the target has a thickness in the range of 2-6 mm, and magnetic susceptibility (PTF) value of 40%-60%. A magnetic recording layer of a magnetic recording medium prepared from the alloy target material is in preferred orientation growth of (002) crystal face, and in the X diffraction analysis, the X ray diffraction peak intensity ratio of the (002) crystal plane represented by the formula (1) is 70%-90%. The sputtering target provided by the invention has low content of harmful impurity elements, fine and uniform grain size, homogeneous chemical composition with small deviation from the nominal composition. The magnetic recording medium prepared from the above sputtering target material has uniform and fine grains, clear nonmagnetic grain boundaries, and excellent magnetic properties.

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