The aim of the present invention is to provide a seed crystal isolating spindle that is used in a device for producing single crystals by a solution method that allows for faster growth of SiC single crystals than in the past, and a method for producing single crystals by the solution method. The seed crystal isolating spindle used in a device for producing single crystals by the solution method is a seed crystal isolating spindle wherein at least a portion of a side of the seed crystal isolating spindle is coated by a reflective member having a higher reflectivity than the reflectivity of the seed crystal isolating spindle and the reflective member is disposed such that there is a space between the reflective member and the seed crystals isolated at an end face of the seed crystal isolating spindle.