The invention relates to a high-power laser device chip structure with the wavelength of 808nm and a method for manufacturing the high-power laser device chip structure. The high-power laser device chip structure comprises a buffer layer (1), a first gradual change constraint layer (2), a first waveguide layer (3), a second waveguide layer (4), a first quantum well barrier layer (5), a quantum well active layer (6), a second quantum well barrier layer (7), a third waveguide layer (8), a corrosion stop layer (9), a fourth waveguide layer (10), a second gradual change constraint layer (11), an ohmic contact layer (12), an insulating dielectric layer (13), a P-type upper electrode (14) and an N-type lower electrode (15) which are sequentially generated on a substrate (0). The high-power laser device chip structure and the method have the advantages that the structure manufactured by the aid of the method is additionally provided with the corrosion stop layer, the corrosion stop layer comprises P-type InGaP, accordingly, corrosion depths can be conveniently controlled, and excellent effects of improving the production efficiency and increasing the yields can be realized.