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发明公开
CN104185895A 外延掺杂的锗锡合金的形成方法 失效 - 权利终止

外延掺杂的锗锡合金的形成方法
摘要：
在此描述用于形成锗锡层的方法与所得的实施例。将锗前驱物与锡前驱物提供至腔室，且在基板上形成锗锡的外延层。锗锡层选择性沉积在基板的半导体区域上，且可包括具有改变的锡与掺杂剂浓度的厚度区域。可通过交替地或同步地将卤化物气体流入以蚀刻基板表面而选择性沉积锗锡层。
摘要（英）：

A method for forming germanium tin layers and the resulting embodiments are described. A germanium precursor and a tin precursor are provided to a chamber, and an epitaxial layer of germanium tin is formed on the substrate. The germanium tin layer is selectively deposited on the semiconductor regions of the substrate and can include thickness reqions of varying tin and dopant concentrations. The germanium tin layer can be selectively deposited by either alternating or concurrent flow of a halide gas to etch the surface of the substrate.

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