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发明公开
CN104272442A 半导体器件的制造方法 有权

半导体器件的制造方法
摘要：
在SiC基板(11)的正面形成包含钛、钨、钼、铬中的任一种金属的层，通过加热在SiC基板(11)上形成肖特基电极(16)。利用铝或者含硅的铝，在肖特基电极(16)的表面形成表面电极(17)。在形成表面电极(17)时，以100℃以上500℃以下的温度进行加热，因此表面电极(17)对于肖特基电极(16)的凹凸覆盖良好，表面电极(17)还具有适合于自动引线接合装置进行图像识别的反射率。如此一来，能够形成对肖特基接触的凹凸覆盖良好、并且具有最适于定位等图像识别的反射率的表面电极。
摘要（英）：

A layer including one metal from titanium, tungsten, molybdenum, and chromium is formed on the obverse surface of a SiC substrate (11) and heated, whereby a Schottky electrode (16) is formed on the SiC substrate (11). A surface electrode (17) is formed on the surface of the Schottky electrode (16) from aluminum or aluminum containing silicon. When the surface electrode (17) is formed, heating is performed at 100 DEG C to 500 DEG C, whereby the concave/convex features on the Schottky electrode (16) are covered by the surface electrode (17) in a satisfactory manner, and the reflectivity of the surface electrode (17) becomes suitable for image recognition by an automatic wire bonding device. It is thereby possible to form a surface electrode that covers the concave/convex features of the Schottky contact in a satisfactory manner and has the optimum reflectivity for image recognition such as for positioning.

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