利索-全球专利检索

  1. 登录
  2. 注册
发明授权
CN104303280B 半导体基板的评价方法、评价用半导体基板、半导体装置 有权

半导体基板的评价方法、评价用半导体基板、半导体装置
摘要：
本发明是在EP基板1上，成长与EP基板1不同的导电型EP层2。在EP层2上形成分离氧化膜9。通过离子注入，形成与EP层2相同的导电型井5，并且在分离氧化膜9的正下方利用自对准形成通道阻绝层10。在井5中，使与井5不同的导电型掺杂物扩散而在井5内形成pn接合7。形成多个以扩散层6作为一电极、以EP基板1的背面1a作为另一电极的单元20而用作TEG，对来自井中的空乏层8以及EP层2与EP基板1的界面的空乏层4的2个空乏层的接合漏电电流进行测定。因此，可提供一种可对CCD、CMOS传感器等要求高良率的产品中使用的高质量晶圆的漏电电流特性高精度地进行评价的半导体基板的评价方法以及半导体基板及半导体装置。
摘要（英）：

On an EP substrate 1, an EP layer 2 having a conductivity type different from that of the EP substrate 1 is grown. With ion implantation, a well 5 having the same conductivity type as the EP layer 2 is formed, and a channel stop layer 10 is also formed. A dopant having a conductivity type different from that of the well 5 is diffused in the well 5 to form a pn junction 7 in the well 5. A plurality of cells 20 each having the diffusion layer 6 as one electrode and a rear surface 1a as the other electrode are formed as a TEG. Using the TEG, junction leakage currents from two depletion layers, a depletion layer 8 in the well and a depletion layer 4 at an interface between the EP layer 2 and the EP substrate 1, are measured.

公开/授权文献
0/0