The purpose of the present invention is to provide a solar cell, which suppresses generation of defects, and which has high photoelectric conversion efficiency. This solar cell is provided with: a silicon substrate formed of a single crystal or the like of an n-type single crystal silicon substrate (1) having pyramid-shaped recessed and projecting sections (P) formed thereon; and an amorphous or fine crystal semiconductor layer, which is film-formed on the single crystal silicon substrate. Flat portions (F) are formed at the valley parts of the pyramid-shaped recessed and projecting sections (P) that are provided on the surface of the single crystal silicon substrate. With such configuration, a sharp angle of 70-85 degrees of the recessed sections formed of substantially a (111) plane can be widened to 115-135 degrees. Consequently, an atomic step-shaped shape change due to a rounded shape can be eliminated, and epitaxial growing and defects in the amorphous or fine crystal semiconductor layer can be suppressed.