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发明公开
CN104409533A InSb红外焦平面探测器阵列及其制作方法 失效 - 权利终止

InSb红外焦平面探测器阵列及其制作方法
摘要：
本发明公开了一种InSb红外焦平面探测器阵列及其制作方法。该探测器阵列包括n型InSb衬底(1)和钝化层(7)，n型InSb衬底(1)上刻蚀有t×t个台面(2)，t为整数且t≥1；每个台面(2)上部淀积有阳极(5)，n型InSb衬底(1)边缘上部淀积有“回”字形阴极(6)；所述n型InSb衬底(1)上部和每个台面(2)侧面淀积有保护层(4)；每个台面(2)正下方的n型InSb衬底(1)内设有m个相同的p型等腰三角形掺杂区(3)，m为整数且m≥1，这些p型等腰三角形掺杂区与n型InSb衬底构成pn结。本发明具有工艺简单、量子效率高、串音低的优点，可用于红外侦查和红外医疗领域。
摘要（英）：

The invention discloses an Insb infrared focal plane detector array and a manufacture method thereof. The Insb infrared focal plane detector array comprises an n type Insb substrate (1) and a passive layer (7), wherein t*t table boards (2) are etched on the n type Insb substrate (1), t is an integer, and larger than or equal to 1, a positive pole (5) is deposited on the upper portion of each table board (2), a negative pole (6) in a shape formed by homocentric squares different in area is deposited on the upper portion of the edge of the n type Insb substrate (1), protection layers (4) are deposited on the upper portion of the n type Insb substrate (1) and side faces of all the table boards (2), m identical p type isosceles triangle doping areas (3) are arranged in a portion of the n type Insb substrate (1), right below each table board (2), m is an integer, and larger than or equal to 1, and all the p type isosceles triangle doping areas (3) and the n type Insb substrate (1) form pn junctions. The Insb infrared focal plane detector array has the advantages of being simple in process, high in quantum efficiency and low in crosstalk, and can be used in the infrared reconnaissance and infrared healthcare filed.

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