A method of patterning a thin film is provided. The method includes coating a thin film layer (100) and photoresist (101) on a surface of a substrate; forming a first partially cured zone (201) by performing a first exposing process of the photoresist with a mask (20), wherein exposing energy applied to the photoresist (101) of the first partially cured zone (201) is less than a photosensitive threshold E of the photoresist; forming a cured zone (202) on the first partially cured zone (201) by performing a second exposing process of the photoresist (101) with the mask (20), wherein a width L2 of the cured zone (202) is less than a width L1 of the first partially cured zone (201), and exposing energy applied to the photoresist (101) of the cured zone (202) is equal to or greater than the photosensitive threshold E of the photoresist (101); developing the photoresist (101); etching the thin film layer (100) that is not covered by the photoresist (101); and removing the photoresist (101) of the cured zone (202).