The invention discloses a double-drain-region semiconductor device based on a trap generation mechanism, and a manufacturing method of the double-drain-region semiconductor device and application of the double-drain-region semiconductor device. An electrical suspension doping region is arranged in the middle of a substrate region, drain end doping regions are arranged on the two sides of the substrate region, conducting channel regions are arranged between the electrical suspension doping region and the drain end doping regions, a grid insulating medium layer covers the electrical suspension doping region and trap regions, grid end metal electrode layers are arranged on the two sides of the grid insulating medium layer respectively, an insulating isolating layer is arranged between the two grid end metal electrode layers, drain end metal electrode layers are arranged on the drain end doping regions, the drain end doping regions are isolated from adjacent regions through isolating oxidation regions respectively, and substrate metal electrode layers are arranged at the portions, where substrate electrodes are arranged, of the other sides of the isolating oxidation regions of the drain end doping region. The structure of the device is well compatible with the traditional CMOS process.