Provided is a device and method for testing a quantum cell using a semiconductor probe in which electrical characteristics of the charging layer can be evaluated, partway through the process of producing a quantum cell, without causing damage. A probe charging layer (58) is formed, using the same material as that used in the quantum cell, on a semiconductor probe (50) configured by layering an electrode (54) and a metal oxide semiconductor (56) on a support body (52), and irradiated with UV. Forming the probe charging layer (58) on the semiconductor probe (50) using the same material as that used in the quantum cell makes it possible to perform evaluation without damaging the charging layer of the quantum cell. Provided is a test device and test method in which the charge/discharge characteristics of the charging layer (18) partway through the process of producing the quantum cell are measured by a voltmeter (64) and a constant current supply (62) or a discharge resistance (66), using the semiconductor probe (50) provided with the probe charging layer (58).