The invention discloses a heat treatment method for eliminating tellurium-zinc-cadmium material precipitate-phase defects. An apparatus employed the method comprises a quartz tube heat treatment cavity, a double-temperature-area heating furnace, a high-purity gas system provided with a N2 source, a H2 source and an Ar source and being capable of being supercharged, and a sample heat treatment box. By using the sample heat treatment box (containing a Cd source) and a pressure-increasable inert protective gas, a low-leakage stable cadmium-partial-pressure gas phase environment is provided for a tellurium-zinc-cadmium wafer in a pipe-opened heat treatment system, the wafer heat treatment temperature is controlled at 500 DEG C-900 DEG C, and the cadmium source loss during 750 DEG C cadmium-rich heat treatment is controlled at 20 mg/h or less. The apparatus is capable of reducing the dimension of precipitate-phase defects in the tellurium-zinc-cadmium wafer, reducing density of precipitate-phase defects on the wafer surface and improving the transmittance rate of the wafer at infrared band, and also the technology is efficient and low in cost, and has the batch production capability of simultaneously processing multiple wafers.