The invention provides a high-reliability data reading method used for a flash memorizer. The flash memorizer comprises one group of ECC (Error Correction Code) control register, wherein the ECC control register comprises a management byte enabling bit, a left sector data enabling bit and a right sector data enabling bit and is used for controlling whether error correction treatment is carried out on the other sector in a user data region or not; when reading operation is carried out on nandflash: when a left sector in the user data region is read logically, the left sector data enabling bit in the ECC control register is enabled; if the left sector is located in a first user data region, a management byte length control bit in the ECC control register is configured to be effective (the length is 8), and a reading command is sent to read user management information into a BCH (Broadcast Channel) module to be decoded and be subjected to error correction, and is not loaded into a controller buffer; left sector data are read into the BCH module to be decoded and be subjected to the error correction and are loaded into the controller buffer to be subjected to the error correction, and a right sector is read into the BCH module to be decoded and be subjected to the error correction and is not loaded into the controller buffer. According to the high-reliability data reading method used for the flash memorizer, the reading-writing speed of nandflash memory devices is improved, and the loading information accuracy and the hardware utilization rate are also guaranteed.