Provided is a configuration for a semiconductor layer and a line for reducing the segment length of the semiconductor layer with respect to the bending direction of the flexible substrate. Such a configuration reduces the probability of cracks occurring in the semiconductor layer of the thin-film transistor, thereby improving the stability and durability of the thin-film transistor employed in a curved or a flexible display device. The configuration includes a thin-film transistor (TF) on the flexible substrate. The TFT includes the semiconductor layer extending obliquely with respect to the direction of the line.