The invention discloses a chemical vapor deposition method. The chemical vapor deposition method comprises injection of a metal source precursor and a non-metal source precursor into a reaction cavity provided with a substrate, wherein the metal source precursor and the non-metal source precursor both pass through a plasma generation device always opened in the chemical vapor deposition process; and the metal source precursor is injected into the reaction cavity in a pulse form. The invention further provides chemical vapor deposition equipment. In the whole chemical vapor deposition process, the plasma generation device is always opened to prevent frequent luminance build-up of an electrode of the plasma generation device, so that the risk of particle generation caused by the bombardment of the electrode under the radio frequency high-pressure effect is reduced, the risk of the particles polluting the substrate is reduced, and the service life of a radio frequency power supply in the plasma generation device is prolonged.