A semiconductor device includes: a semiconductor substrate; multilayer wiring layers formed on the semiconductor substrate; a first insulation film formed on the multilayer wiring layers; a bonding pad formed on the first insulation film and formed by laminated films which include a first metal film, a second metal film formed on the first metal film, and a third metal film formed on the second metal film; and a second insulation film formed on the first insulation film and the bonding pad, the second insulation film having a first opening so that an upper surface of the bonding pad is exposed from the first opening, wherein the third metal film has a seam so that in a top view the seam is arranged at a certain space from the first opening. One invention of the application is to remove a titanium nitride film on the bonding pad in a ring shape or a seam shape at the periphery region of aluminium-based linking bonding pad.