The invention provides a high-isolation RF (radio frequency) switch circuit. The circuit comprises a basic single-pole single-throw RF switch unit and a filter unit, wherein at a reference ground point C of the basic single-pole single-throw RF switch unit, a bonding wire parasitic inductor L1b is in series connection with an inductor L3b connected with the ground, a direct current channel is formed, a bonding wire parasitic inductor L2b is in series connection with a capacitor C1b connected with the ground, the inductor L1b is in series connection with an inductor L3b which is in parallel connection with the capacitor C1b connected with the reference ground point C through a bonding wire L2b, and a filter is formed. Thus, under the condition that the direct current channel from an RF switch to the ground is not affected, the bonding wire parasitic inductor L1b is integrated into the filter, the effect caused by bonding wire parasitic parameters on the isolation of the RF switch is reduced, the isolation of the RF switch at different frequencies can be increased in a targeted manner through adjustment of values of the inductor L3b and the capacitor C1b of the filter. The isolation of the high-isolation RF switch can be 5-10 dB higher than that of a traditional RF switch, and meanwhile, electrical characteristics such as insertion loss and the like of the RF switch cannot be affected.