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发明授权
CN104991086B 一种MEMS加速度传感器的加工方法及加速度传感器 有权 转让

一种MEMS加速度传感器的加工方法及加速度传感器
摘要：
本发明公开一种MEMS加速度传感器的加工方法，采用〈111〉晶向的硅晶圆作为衬底硅，在所述衬底硅上刻蚀具有第一上表面和第一下表面的第一腔体，以及具有第二上表面和第二下表面的第二腔体，并使所述第一腔体与所述第二腔体相互连通，使所述衬底硅位于所述第一腔体上方的部分作为加速度传感器的质量块，位于所述第二腔体上方的部分作为加速度传感器的悬臂梁，保证所述质量块的厚度大于所述悬臂梁的厚度。该方法为低成本的MEMS加速度传感器加工方法；在同一片晶圆上加速度传感器的性能一致性高。
摘要（英）：

The invention discloses a method for machining an MEMS acceleration sensor, uses a silicon wafer of a <111> crystal orientation as substrate silicon, etches a first cavity having a first upper surface and a first lower surface on the substrate silicon and a second cavity having a second upper surface and a second lower surface, the first cavity and the second cavity are communicated with each other, a part of the substrate silicon, which is located at an upper side of the first cavity, is used as a mass block of the acceleration sensor, a part which is located at an upper side of the second cavity is used as a cantilever beam of the acceleration sensor, and the thickness of the mass block is larger than that of the cantilever beam. The method is a lowcost MEMS acceleration sensor machining method; and consistency of performance of acceleration sensors on the same wafer is high.

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