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发明授权
CN105023902B 半导体用接合线 有权 转让

半导体用接合线
摘要：
本发明提供即使对于镀钯的引线框也能够确保良好的楔接合性、耐氧化性优异的以铜或铜合金为芯线的半导体用接合线。根据一个实施方式的半导体用接合线，其特征在于，具有：由铜或铜合金构成的芯线；形成于该芯线的表面的具有10～200nm的厚度的含有钯的被覆层；和形成于该被覆层的表面的具有1～80nm的厚度的含有金和钯的合金层，所述合金层中的金的浓度为10体积％～75体积％，在测定接合线表面的结晶取向所得到的测定结果中，相对于拉丝方向的倾斜为15度以下的结晶取向 的晶粒的面积比为40％～100％。
摘要（英）：

There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.

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