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发明授权
CN105097448B 晶片的加工方法 有权

晶片的加工方法
摘要：
本发明提供一种晶片的加工方法，能够以使得对单晶锭分割而形成的晶片上不会产生翘曲的方式进行加工。在对单晶锭进行分割而形成的晶片的加工方法中，实施去除残留于晶片外周的晶体畸变的晶体畸变去除工序。在晶体畸变去除工序中，从晶片的一个面侧沿着外周缘对相比于外周缘偏规定的量的内侧的位置处照射对晶片具有透过性的波长的激光束，在从晶片的一个面到另一个面上的范围内使细孔和密封该细孔的非晶质成长，形成环状的密封通道。然后，沿着密封通道施加外力，从而在密封通道的区域上使晶片破断，去除残留有晶体畸变的外周部。
摘要（英）：

A wafer is formed by slicing a single crystal ingot and removing crystal strains remaining in a peripheral portion of the wafer. In the crystal strain removing step, a laser beam having such a wavelength as to be transmitted through the wafer is applied to the wafer from one side of the wafer in positions located along the margin of the wafer and spaced a predetermined distance inward from the margin, to cause growth of fine holes and amorphous regions shielding the fine holes, over the range from one side to the other side of the wafer, whereby shield tunnels are formed in an annular pattern. Then, an external force is applied to the wafer along the shield tunnels so as to break the wafer in the region of the shield tunnels, thereby removing the peripheral wafer portion where the crystal strains are remaining.

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