Provided in the invention is a detection apparatus of a silicon core resistivity. The detection apparatus comprises N metal probes, an operating console, a constant-current power supply, a voltage measurement unit, a control unit and a calculating unit, wherein the N is larger than or equal to 3. Two metal probe needles are arranged at the bottom of each metal probe. The operating console enables the N metal probes to be arranged uniformly along an axial direction of a to-be-measured silicon core and each probe needle is arranged on the surface of the to-be-measured silicon core vertically with a certain pressure. The constant-current power supply provides a constant direct current for the to-be-measured silicon core. The voltage measurement unit measures a potential difference between the two metal probe needles of each metal probe simultaneously. The control unit controls the direct current outputted by the constant-current power supply as well as forward and reversed directions of a measurement loop in the voltage measurement unit and converts output values of the constant-current power supply and the voltage measurement unit into data that can be identified by the calculating unit. And the calculating unit calculates a resistivity of the to-be-measured silicon core according a calculation formula stored in the calculating unit in advance and data outputted by the control unit. According to the invention, the measurement efficiency and the precision of the detection apparatus are high.