The invention belongs to the technical field of semiconductors, and particularly relates to a power semiconductor device and a manufacturing method thereof, in particular to a reverse conducting MOS trigger negative resistance device. The power semiconductor device comprises an N-type substrate, wherein a P-type base region is arranged on the upper surface of the N-type substrate; an N-type source region, a PIN anode region and an N-type emitter region are arranged on the upper surface of the P-type base region, wherein the N-type source region is the source end of an MOS tube, the PIN anode region is the anode region of a reverse PIN tube, and the N-type emitter region is the cathode region of an NPNP thyristor; a P-type anode region is arranged on the lower surface of the N-type substrate, an N-type anode region is arranged at the middle position of the P-type anode region 7, and the N-type anode region is directly connected with the N-type substrate without passing through the P-type anode region and is contained in the P-type anode region. The power semiconductor device has the beneficial effects that the device has normally-closed function, extremely high peak current capacity and current rise rate and reverse conducting capacity; and moreover, the invention also provides the simple manufacturing method, and the device disclosed by the invention also has higher reliability.