The invention discloses a semiconductor device. The semiconductor device comprises a source line, a word line and a word line contact hole structure, wherein the word line and the source line are arranged in parallel; the word line contact hole structure and the word line are vertically arranged in an intersection mode; a contact surface formed through intersecting the word line contact hole structure and the word line is arranged close to one side edge on the word line, wherein the side edge is far away from the source line. In the semiconductor device, the contact surface formed through intersecting the word line contact hole structure and the word line is arranged close to one word line side edge which is far away from the source line so that a distance between a word line contact hole and the source line is increased, a parasitic capacitance between the word line contact hole structure and the source line is reduced and a breakdown voltage of the semiconductor device is increased.