The invention mainly relates to the power semiconductor device field and provides a power semiconductor device structure. The power semiconductor device structure includes an active area for a power semiconductor device and a junction terminal area for the power semiconductor device. As the on resistance of the active area can be reduced by filling the inside of the active area with HK materials, the power consumption of a power device can be reduced; and at the same time, as the voltage endurance capability of the HK materials is better than the voltage endurance capability of silicon, the layout area of the active area can be reduced. The periphery or the outside of the active area is filled with the HK materials to construct the junction terminal area, so that the electric field distribution at the edge of the power device can be optimized; the curvature effect can be effectively alleviated; and at the same time a metal field plate of the junction terminal area can also effectively improve nonuniform distribution of electric potential for the power device. The junction terminal area has no need for a complicated structural design and is convenient for manufacturing under the prior art condition; and compared with the current power device junction terminal processing technology, only by introducing the HK materials, optimization of electric field distribution at the edge of the power device can be effectively realized so that the voltage-resistant value of the power semiconductor device is greatly improved.