The invention provides an insulated gate bipolar transistor and a manufacturing method thereof. The insulated gate bipolar transistor comprises a collector electrode, a collector layer, a first conductive drift layer, which is arranged on the collector layer, a first emitter layer, a groove, which extends from the surface of the first emitter layer to the first conductive drift layer and comprises a first side and a second side, wherein the fist side is opposite to the second side; gate electrodes, which are filled into the groove and extends to the surface of the first emitter layer, wherein the extension distances of the gate electrodes on the first side and the second side are different; a gate dielectric layer, a second emitter area, an interlayer dielectric layer, and an emitter electrode.