The invention discloses a simulation model of a silicon carbide Schottky diode C5D50065D. The simulation model comprises a first voltage-controlled current source, a temperature-controlled resistor, a second voltage-controlled current source and a modeling module, wherein the first voltage-controlled current source and the temperature-controlled resistor are connected in series with each other; the second voltage-controlled current source is connected in parallel with the first voltage-controlled current source and the temperature-controlled resistor; the first voltage-controlled current source is used for simulating forward characteristics and reverse characteristics of the silicon carbide Schottky diode; the temperature-controlled resistor is used for simulating drift region resistance of the silicon carbide Schottky diode; the second voltage-controlled current source is used for simulating junction capacitance of the silicon carbide Schottky diode; and the modeling module is used for realizing modeling of the first voltage-controlled current source, the temperature-controlled resistor and the second voltage-controlled current source. The simulation model has the following advantages that a modeler does not require deep device semiconductor knowledge and professional device test conditions, a new way for modeling of the silicon carbide Schottky diode C5D50065D is provided, and the simulation model can be extensively applied to simulation of power electronic circuits comprising the silicon carbide Schottky diode C5D50065D.