The invention provides a square crimping type IGBT (Insulated Gate Bipolar Transistor) crimping structure. An IGBT drive, a drive support frame, a crimping type square IGBT compose an IGBT component; multiple IGBT components and a radiator are alternately connected in series to form a series connection component; the two ends of the series connection component are respectively connected with an output copper bar; the two ends of the series connection component are clamped and fixed between a front pressure dispersing plate and a back pressure dispersing plate through an up-pressing device and an elastic clamping device; and the front pressure dispersing plate and the back pressure dispersing plate are connected and fixed together through an insulating pull rod to compose a support framework of the crimping structure. The crimping structure is simple, and convenient to assemble and disassemble; the IGBT is uniformly stressed; convenience is brought to detection and examination of a single or multiple IGBTs; and the IGBT drive is provided with an enclosure which protects a driver board against electromagnetic interference and all kinds of damage brought by an outer environment, so that the service life of the IGBT drive is prolonged.