A high frequency power diode is provided comprising a semiconductor wafer having a first main side (101) and a second main side (102), a first layer (103) of a first conductivity type formed on the first main side (101), a second layer (105) of a second conductivity type formed on the second main side (102) and a third layer (104) of the second conductivity type formed between the first layer (103) and the second layer (105). The first layer (103) has a dopant concentration decreasing from 10 19 cm -3 or more adjacent to the first main side (101) of the wafer to 1.5-10 15 cm -3 or less at an interface of the first layer (103) with the third layer (104). The second layer (105) has a dopant concentration decreasing from 10 19 cm -3 or more adjacent to the second main side (102) of the wafer to 1.5,10 15 cm -3 at an interface of the second layer (105) with the third layer (104) and the third layer (104) has a dopant concentration of 1.510 15 cm -3 or less. The dopant concentration in the first layer (103) at a distance of 50 [mu]m from the first main side (101) and the dopant concentration in the second layer (105) at a distance of 50 [mu]m from the second main side (102) is 10 17 cm -3 or more, respectively, and the thickness of the third layer (104) is less than 60 [mu]m.