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发明公开
CN105448760A 一种提高晶圆测试稳定性的方法 无效 - 驳回

一种提高晶圆测试稳定性的方法
摘要：
本发明提供一种提高晶圆测试稳定性的方法，所述方法至少包括以下步骤：首先利用紫外光对晶圆表面进行照射清洗，以去除晶圆表面的杂质薄膜；再对所述晶圆进行烘烤，以去除晶圆表面的水分；最后对所述晶圆进行退火处理，所述退火处理在保护气体中进行，以保持晶圆性质的稳定。本发明的提高晶圆测试稳定性的方法能有效去除晶圆表面的AMC、水分、碳氢化合物等污染物，并阻止污染物再次黏附晶圆表面，避免晶圆表面的污染物给晶圆测试带来干扰、影响晶圆性能测试的结果，从而大大提高晶圆测试的稳定性。
摘要（英）：

The invention provides a method for improving the test stability of a wafer. The method comprises at least the following steps of: irradiating and cleaning the surface of the wafer by using ultraviolet light in order to remove an impurity film on the surface of the wafer; baking the wafer in order to remove water on the surface of the wafer; and finally annealing the wafer in a protective gas in order to maintain the stability of the property of the wafer. The method for improving the test stability of the wafer may effectively remove pollutants such as AMC, water, hydrocarbon and the like, on the surface of the wafer, and prevents the pollutants from adhering to the surface of the wafer again and further prevents the pollutants on the surface of the wafer from interfering with the test of the wafer and influencing the result of the wafer performance testing so as to greatly improve the test stability of the wafer.

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