利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN105448761A 半导体工艺涨缩值的测试方法及装置 有权 转让

半导体工艺涨缩值的测试方法及装置
摘要：
本发明实施例提供一种半导体工艺涨缩值的测试方法及装置。该方法包括：获取方块电阻的阻值、接触孔电阻的阻值和条形电阻两端电压与电流比值；依据所述方块电阻的阻值、所述接触孔电阻的阻值、所述条形电阻的设计宽度、所述条形电阻的设计长度，以及所述条形电阻两端电压与电流比值获得所述条形电阻的宽度的工艺涨缩值。本发明实施例通过测试获得方块电阻的阻值、接触孔电阻的阻值和条形电阻两端电压与电流比值，同时通过条形电阻的设计宽度和条形电阻的设计长度，依据电路原理计算获得条形电阻的宽度的工艺涨缩值，即采用电参数测试方法，不需要破坏性测试，便可准确计算出半导体工艺流程中各层图形复制工艺的涨缩值。
摘要（英）：

Embodiments of the invention provide a method and a device for testing the expanding and shrinking value of a semiconductor technology. The method comprises the following steps: acquiring the resistance of a square resistor, the resistance of a contact hole resistor and the voltage-current ratio of a strip resistor; and acquiring the process expanding and shrinking value of the width of the strip resistor according to the resistance of the square resistor, the resistance of the contact hole resistor, the design width of the strip resistor, the design length of the strip resistor and the voltage-current ratio of the strip resistor. According to the embodiments of the invention, the resistance of the square resistor, the resistance of the contact hole resistor and the voltage-current ratio of the strip resistor are acquired through test, and the process expanding and shrinking value of the width of the strip resistor is calculated according to the design width of the strip resistor and the design length of the strip resistor and on the basis of the circuit principle, namely, by adoption of an electrical parameter test method, the expanding and shrinking value of the pattern replication technology of each layer in a semiconductor technological process can be calculated accurately without the need for destructive test.

公开/授权文献
0/0