The embodiment provides a semiconductor device which possesses a plurality of pixels, including a photoelectric conversion portion, a first impurity diffusion zone, a voltage supply line, a second impurity diffusion zone, a potential barrier portion and a detection portion. The first impurity diffusion zone maintains the charge converted by the photoelectric conversion portion. The second impurity diffusion zone is in connection with the voltage supply line. The potential barrier portion forms constant potential barrier between the first impurity diffusion zone and the second impurity diffusion zone, and restricts the movement of the charge between the first impurity diffusion zone and the second impurity diffusion zone. The detection portion detects the charge maintained by the first impurity diffusion zone.