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发明公开
CN105453242A 半导体检查方法、半导体检查装置以及半导体元件的制造方法 失效 - 权利终止

半导体检查方法、半导体检查装置以及半导体元件的制造方法
摘要：
在本发明的半导体检查装置的半导体检查方法中，选择入射能量和负电位来进行控制，向晶圆的检查面扫描一次电子而检测二次电子，取得第一检查图像，通过基于预先确定的二次电子的信号量的阈值的图像处理，判别包含在第一检查图像中的宏观缺陷、层叠缺陷、基面位错和贯通位错。另外，选择入射能量和正电位来进行控制，向晶圆的检查面扫描一次电子而检测二次电子，取得第二检查图像，通过基于预先确定的二次电子的信号量的阈值的图像处理，判别包含在第二检查图像中的点形状图形的贯通螺旋位错。
摘要（英）：

A semiconductor inspection method using a semiconductor inspection apparatus according to the present invention selectively controls incident energy and a negative potential, causes primary electrons to scan the inspection surface of a wafer, detects secondary electrons, thereby obtaining a first inspection image, and identifies macroscopic defects, stacking faults, basal plane dislocations, and threading dislocations captured in the first inspection image, by means of image processing based on a predetermined threshold value for the magnitude of the secondary electron signal. Further, the semiconductor inspection method selectively controls the incident energy and a positive potential, causes primary electrons to scan the inspection surface of the wafer, detects the secondary electrons, thereby obtaining a second inspection image, and identifies threading screw dislocations captured as dot-like shapes in the second inspection image, by means of image processing based on a predetermined threshold value for the magnitude of the secondary electron signal.

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