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Invention Grant
CN105492657B PECVD微晶硅锗(SIGE) 有权

PECVD微晶硅锗(SIGE)
Abstract:
本发明的实施方式大体涉及用于形成SiGe层的方法。在一个实施方式中，首先使用等离子体增强化学气相沉积(PECVD)形成种晶SiGe层，并且也使用PECVD在PECVD种晶层上直接形成主体SiGe层。用于种晶SiGe层和主体SiGe层二者的处理温度低于450摄氏度。
Abstract(English):

Embodiments of the present invention generally relate to methods for forming a SiGe layer. In one embodiment, a seed SiGe layer is first formed using plasma enhanced chemical vapor deposition (PECVD), and a bulk SiGe layer is formed directly on the PECVD seed layer also using PECVD. The processing temperature for both seed and bulk SiGe layers is less than 450 degrees Celsius.

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