An object of the invention is to provide technology can improve filling ability of a highly-packed component. A power semiconductor device includes an insulating substrate (1), a semiconductor element (2), a case (4), and a wiring member (5). The case (4) forms a container body having a bottom surface defined by a surface of the insulating substrate (1), to which said semiconductor element (2) is bonded. The wiring member (5) has a bonding portion positioned above an upper surface electrode (2a) of the semiconductor element (2). The bonding portion of the wiring member (5) is provided with a projection portion (5b) projecting toward the upper surface electrode (2a) of the semiconductor element (2) and bonded to the upper surface electrode (2a) with a solder (6), and a through hole (5c) passing through the bonding portion in a thickness direction through the projection portion (5b).