The invention discloses an IBC cell structure and a manufacturing technology method thereof, and mainly solves the problems in the prior art that the IBC cell manufacturing technology is complex and manufacturing cost is high. The N-type IBC cell comprises an anti-reflection layer, a silicon substrate, doping layers, a passivation layer and metal electrodes. The N-type IBC cell is characterized in that the anti-reflection layer is arranged at the front surface of the silicon substrate. The silicon doping layers comprise an n+ heavily doping layer and a p+ heavily doping layer. The n+ heavily doping layer and the p+ heavily doping layer are arranged at the back surface of the silicon substrate in parallel. The passivation layer is arranged on the n+ heavily doping layer and the p+ heavily doping layer. The metal electrodes are led out of the n+ heavily doping layer and the p+ heavily doping layer to the back surface of the passivation layer. The anti-reflection layer and the passivation layer of a SiNx film or a laminated film are adopted so that the existing cell structure is simplified, production efficiency is enhanced and production cost is reduced.