The invention discloses a preparation method of an inorganic semiconductor thin-film function unit suitable for transferring. The method comprises the following steps: growing an inorganic semiconductor epitaxial wafer with a sacrificial layer and preparing a traditional function unit; carrying out undercutting on the sacrificial layer; coating a flexible polymer material and patterning the flexible polymer material; corroding the sacrificial layer; and finishing preparation of an ultra-thin inorganic semiconductor function unit suitable for transferring. The prepared inorganic semiconductor function unit has the advantages of being small in thickness, ordered and controllable in structure, good in repeatability, low in fabrication cost, simple to operate, easy to transfer and the like.