The invention belongs to the field of transistor threshold voltage regulating and controlling technology, and relates to a method for regulating and controlling threshold voltage of a semiconductor nanowire field effect transistor. The method comprises steps of depositing metal-oxide semiconductor materials or metal materials on a prepared semiconductor nanowire field effect transistor or a prepared nanowire array field effect transistor, and carrying out film coating decoration on the surface of the semiconductor nanowire field effect transistor or on the surface of the nanowire array field effect transistor, wherein thickness of a coating film is 0.2-5 nm, thereby regulating and controlling the threshold voltage of the semiconductor nanowire field effect transistor or the nanowire array field effect transistor. According to the invention, the technique is simple; operation is simple; principles are reliable; product cost is low; the method has a wide application prospect in field of electronic switch devices, displays, and biological and chemical sensors; and large-scale industrial production can be easily carried out.