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发明公开
CN105714262A 一种择优生长ITO透明导电薄膜的制备方法 无效 - 驳回

一种择优生长ITO透明导电薄膜的制备方法
摘要：
本发明公开了一种择优生长ITO透明导电薄膜的制备方法，其步骤包括清洗衬底；制备硫化锌缓冲薄膜；制备(222)择优取向的ITO薄膜。本发明采用磁控溅射技术，在洁净的玻璃基底上先沉积一层ZnS薄膜，通过控制玻璃基底温度得到具有(111)择优取向的ZnS；然后再通过控制制备工艺沉积ITO，即可得到具有(222)择优取向的ITO薄膜。本发明的择优生长ITO透明导电薄膜的制备方法，通过增加ZnS缓冲层，获得具有(222)择优取向的ITO薄膜，提高ITO的光电性能。
摘要（英）：

The invention discloses a preparation method of a preferred growing ITO transparent conductive film. The preparation method comprises the following steps: washing a substrate; preparing a zinc sulfate buffer film; and preparing an ITO film of preferred orientation (222). By adopting a magnetron sputtering technology, a layer of ZnS film is first deposited on a clean glass substrate, and the ZnS with preferred orientation (111) is obtained by controlling the temperature of the glass substrate; and then the ITO is deposited by controlling a preparation process, so that the ITO film with the preferred orientation (222) can be obtained. According to the preparation method of the preferred growing ITO transparent conductive film, by adding the ZnS buffer layer, the ITO film with the preferred orientation (222) is obtained, so that the photoelectric performance of ITO is improved.

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