The invention relates to a phase changing memory and a method for fabricating the same. The phase changing memory comprises a lamination structure, a contact structure, a second insulation layer and a phase changing structure, wherein the lamination structure is provided with a plurality of first conductive lines and a plurality of first insulation layers, the first conductive line is clamped between two adjacent first insulation layers, each first conductive line comprise a notch part, the contact structure essentially extends in a direction perpendicular to the first conductive lines and is in correspondence to the notch part of each conductive line, the second insulation layer covers a part of the notch part of each conductive line, the other part of the notch part are not covered by the second insulation layer, the phase changing structure encircles the contact structure and also comprises a first part and a second part, the first part is clamped between the contact structure and the second insulation layer, and the second part is in solid contact with the other part of each notch part which is not covered by the second insulation layer.