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发明公开
CN105762141A 制造半导体装置的方法 无效 - 撤回

制造半导体装置的方法
摘要：
本发明涉及一种制造半导体装置的方法。通过防止彼此面对的两个半导体芯片之间的介电击穿，实现半导体装置的可靠性提高。在制造第一半导体芯片和第二半导体芯片期间，执行将绝缘膜的上表面平坦化的过程。然后，第一半导体芯片和第二半导体芯片经由绝缘片材堆叠，并且使第一半导体芯片和第二半导体芯片相应的绝缘膜彼此面对，使得第一半导体芯片和第二半导体芯片相应的线圈彼此磁耦合。
摘要（英）：

The present invention relates to a method of manufacturing a semiconductor device. An improvement is achieved in the reliability of the semiconductor device by preventing a dielectric breakdown between two semiconductor chips facing each other. During the manufacturing of first and second semiconductor chips, the process of planarizing the upper surfaces of insulating films is performed. Then, the first and second semiconductor chips are stacked via an insulating sheet with the respective insulating films of the first and second semiconductor chips facing each other such that the respective coils of the first and second semiconductor chips are magnetically coupled to each other.

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