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发明公开
CN105789373A 一种制备铜基硫硒化物半导体薄膜方法 无效 - 驳回

一种制备铜基硫硒化物半导体薄膜方法
摘要：
本发明涉及一种高效光电性能铜基硫硒化物半导体薄膜，为多元铜基硫硒化物材料，化学通式为Cux1M1x2M2x3(SSe)x4，M1和M2为不同的金属元素，且分别为Zn、Sn、Ge、Si、In、Ga、Al中的一种；多元铜基硫硒化物为铜锌锡硫或CuGaS2薄膜；制备方法采用溶液?旋涂法，简单的湿度调控方法制备高效光电性能的多元铜基硫硒化物半导体薄膜。通过调控前驱体溶液所处的环境湿度使多元铜基硫硒化物的光电性能得到显著提升。此湿度调控方法操作简单，且具有通用性。
摘要（英）：

The invention relates to a copper-based sulfoselenide semiconductor thin film with efficient photoelectric properties. The copper-based sulfoselenide semiconductor thin film is a polybasic copper-based sulfoselenide material; a chemical general formula is Cux1M1x2M2x3(SSe)x4, wherein M1 and M2 are different metal electrodes and are one of Zn, Sn, Ge, Si, In, Ga and Al; and the polybasic copper-based sulfoselenide is a copper zinc tin sulfide or CuGaS2 thin film. According to the preparation method, the copper-based sulfoselenide semiconductor thin film with efficient photoelectric properties is prepared by a solution spin-coating method and a simple humidity control method; the photoelectric properties of the polybasic copper-based sulfoselenide are significantly improved by controlling the humidity of the environment in which a precursor solution is located. The humidity control method is simple in operation and has universality.

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