The invention provides a method for growing a silicate crystal. The method includes the following steps that rare earth oxide and silicon oxide are placed in a ball grinding mill for ball milling and mixing, and mixed powder is obtained; the powder is arranged in a die lined with glass paper in batches and pressed into cakes in an oil press; the cakes are placed in a crucible, mixed gas is introduced for high temperature sintering, the mixture is made to conduct a solid phase reaction, and the temperature is lowered to room temperature; the crucible filled with a product is placed in a Tyra furnace, constant temperature is maintained, the product is completely melted, and a melted body is obtained; a seed crystal is made to be in contact with the melted body at the crystallization temperature, the seed crystal rotation speed is controlled, Tyra processes including necking-down, shouldering, diameter equalizing, ending and in-situ annealing are adopted to make the crystal grow, and the silicate crystal is obtained. According to the method, the Tyra method is adopted to promote growth of the silicate crystal, and the raw material, the growth condition and the growth process are optimized, so that the prepared silicate crystal is uniform in growth performance, high in quality, completely transparent and free of macroscopic defects such as a wrapping body, bubbles and cracks.