A system and method is provided to reduce power consumption in an electronic device. Provided are an electronic device and system, and a method for making and using the same, and a semiconductor device. The structure and method can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, and relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced [sigma]VT compared to conventional bulk CMOS and can allow the threshold voltage VT of FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption.