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发明公开
CN105957924A 一种利用ZnO缓冲层制备择优取向ITO光电薄膜的方法 无效 - 驳回

一种利用ZnO缓冲层制备择优取向ITO光电薄膜的方法
摘要：
本发明公开了一种利用ZnO缓冲层制备择优取向ITO光电薄膜的方法，其步骤包括清洗衬底；制备ZnO缓冲薄膜；制备(222)择优取向的ITO薄膜。本发明采用磁控溅射技术制备的ITO透明导电薄膜为单相多晶结构，主要包括(211)(222)(400)(440)(622)等晶粒结构，本发明通过增加一层ZnO缓冲层材料，可制备出具有(222)择优取向的ITO透明导电薄膜，从而提高ITO透明导电薄膜的光电性能。
摘要（英）：

The invention discloses a method for preparing a preferred orientation ITO photoelectric thin film by a ZnO buffer layer. The method comprises the steps of cleaning a substrate; preparing a ZnO buffer thin film; and preparing a preferred orientation ITO thin film with a grain structure (222). The ITO transparent conductive thin film prepared by a magnetron sputtering technology is adopted as a single-phase polycrystalline structure and manly comprises grain structures of (211), (222), (400), (440), (622) and the like. The preferred orientation ITO transparent conductive film with the grain structure (222) can be prepared by adding a layer of ZnO buffer layer material, so that the photoelectric property of the ITO transparent conductive thin film is improved.

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