The invention discloses an end point detection method of a semiconductor etching process. An etched semiconductor structure at least comprises a barrier layer and a dielectric layer. Xenon difluoride is selected as etching gas. Before ending of an etching process, HF gas is led into an etching environment to generate an end point marking product; and when generation of the end point marking product is monitored, the etching process is finished. According to the technical scheme, precision of the end point detection is improved substantially; the operator can finish the etching process timely, so that the semiconductor structure quality is improved; and incomplete etching or over etching is avoided.