A resistive random access memory and a method for manufacturing the same are disclosed. The resistive random access memory includes a substrate, a dielectric layer and at least a memory cell string. The dielectric layer is disposed on the substrate. The memory cell string includes a plurality of memory cells and at least one first interconnect structure. The memory cells are vertically and adjacently disposed in the dielectric layer, and each of the memory cells includes a first conductive line, a second conductive line and a variable resistance structure. The second conductive line is disposed at one side of the first conductive line, and a top surface of the second conductive line is higher than a top surface of the first conductive line. The variable resistance structure is disposed between the first conductive line and the second conductive line. The variable resistance structures in the vertically adjacent memory cells are separated from each other. The first interconnect structure connects the vertically adjacent first conductive lines.